ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes
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Abstract
Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate (PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 °C) ITO deposition assisted by an oxygen flow (1 cm3/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10-3 Ω.cm and a surface roughness lower than 1.5 nm. Thus we realized flexible organic light-emitting diodes (FOLEDs) with good performances: a maximum luminance of 12000 cd/m2 at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V (or a maximum current efficiency of 4 cd/A at 14 V) for the (PET(50 μm)/ITO(200 nm)/TPD(40 nm)/Alq3(60 nm)/Ca/Al) structure.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes</title><author><name sortKey="Lucas, B" uniqKey="Lucas B">B. Lucas</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM, 123 Av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName><orgName type="university">Université de Limoges</orgName></affiliation></author><author><name sortKey="Rammal, W" uniqKey="Rammal W">W. Rammal</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM, 123 Av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName><orgName type="university">Université de Limoges</orgName></affiliation></author><author><name sortKey="Moliton, A" uniqKey="Moliton A">A. Moliton</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM, 123 Av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName><orgName type="university">Université de Limoges</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0401922</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0401922 INIST</idno><idno type="RBID">Pascal:06-0401922</idno><idno type="wicri:Area/Main/Corpus">008A46</idno><idno type="wicri:Area/Main/Repository">008A68</idno></publicationStmt><seriesStmt><idno type="ISSN">1286-0042</idno><title level="j" type="abbreviated">EPJ, Appl. phys. : (Print)</title><title level="j" type="main">EPJ. Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Electroluminescence</term><term>Ethylene terephthalate polymer</term><term>Experimental study</term><term>Ion beam sputtering</term><term>Manufacturing processes</term><term>Optoelectronic devices</term><term>Organic light emitting diodes</term><term>Physical vapor deposition</term><term>Sputtering</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pulvérisation irradiation</term><term>Dépôt physique phase vapeur</term><term>Diode électroluminescente organique</term><term>Pulvérisation faisceau ionique</term><term>Ethylène téréphtalate polymère</term><term>Procédé fabrication</term><term>Dispositif optoélectronique</term><term>Electroluminescence</term><term>Microscopie force atomique</term><term>Etude expérimentale</term><term>8115C</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate (PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 °C) ITO deposition assisted by an oxygen flow (1 cm<sup>3</sup>/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10<sup>-3</sup> Ω.cm and a surface roughness lower than 1.5 nm. Thus we realized flexible organic light-emitting diodes (FOLEDs) with good performances: a maximum luminance of 12000 cd/m<sup>2</sup> at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V (or a maximum current efficiency of 4 cd/A at 14 V) for the (PET(50 μm)/ITO(200 nm)/TPD(40 nm)/Alq3(60 nm)/Ca/Al) structure.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1286-0042</s0></fA01><fA03 i2="1"><s0>EPJ, Appl. phys. : (Print)</s0></fA03><fA05><s2>34</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes</s1></fA08><fA11 i1="01" i2="1"><s1>LUCAS (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>RAMMAL (W.)</s1></fA11><fA11 i1="03" i2="1"><s1>MOLITON (A.)</s1></fA11><fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM, 123 Av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>179-187</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26690</s2><s5>354000142419300030</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0401922</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>EPJ. Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>FRA</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate (PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 °C) ITO deposition assisted by an oxygen flow (1 cm<sup>3</sup>/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10<sup>-3</sup> Ω.cm and a surface roughness lower than 1.5 nm. Thus we realized flexible organic light-emitting diodes (FOLEDs) with good performances: a maximum luminance of 12000 cd/m<sup>2</sup> at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V (or a maximum current efficiency of 4 cd/A at 14 V) for the (PET(50 μm)/ITO(200 nm)/TPD(40 nm)/Alq3(60 nm)/Ca/Al) structure.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0><s5>50</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Sputtering</s0><s5>50</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Dépôt physique phase vapeur</s0><s5>51</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Physical vapor deposition</s0><s5>51</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Diode électroluminescente organique</s0><s5>52</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Organic light emitting diodes</s0><s5>52</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Pulvérisation faisceau ionique</s0><s5>53</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Ion beam sputtering</s0><s5>53</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Pulverización haz iónico</s0><s5>53</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Ethylène téréphtalate polymère</s0><s2>NK</s2><s5>54</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Ethylene terephthalate polymer</s0><s2>NK</s2><s5>54</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Etileno tereftalato polímero</s0><s2>NK</s2><s5>54</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Procédé fabrication</s0><s5>55</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Manufacturing processes</s0><s5>55</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0><s5>56</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Optoelectronic devices</s0><s5>56</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Electroluminescence</s0><s5>58</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electroluminescence</s0><s5>58</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>59</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>59</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>60</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Experimental study</s0><s5>60</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>8115C</s0><s2>PAC</s2><s4>INC</s4><s5>91</s5></fC03><fN21><s1>268</s1></fN21><fN44 i1="01"><s1>PSI</s1></fN44><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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